CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS

被引:2
作者
KO, PK
TAM, SM
HU, C
MULLER, RS
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
关键词
D O I
10.1109/T-ED.1981.20591
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1260 / 1261
页数:2
相关论文
共 3 条
[1]  
HU C, 1979, IEDM TECH DIGEST DEC, P29
[2]  
Sing Y. W., 1980, International Electron Devices Meeting. Technical Digest, P732
[3]  
TROUTMAN RR, 1974, INT ELECTRON DEVICES, P43