FABRICATION PROCESS FOR JOSEPHSON INTEGRATED-CIRCUITS

被引：175

作者：

GREINER, JH ^{[1
]}

KIRCHER, CJ ^{[1
]}

KLEPNER, SP ^{[1
]}

LAHIRI, SK ^{[1
]}

WARNECKE, AJ ^{[1
]}

BASAVAIAH, S ^{[1
]}

YEN, ET ^{[1
]}

BAKER, JM ^{[1
]}

BROSIOUS, PR ^{[1
]}

HUANG, HCW ^{[1
]}

MURAKAMI, M ^{[1
]}

AMES, I ^{[1
]}

机构：

[1] IBM CORP, GEN PROD DIV LAB, SAN JOSE, CA 95114 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1980年 / 24卷 / 02期

关键词：

D O I：

10.1147/rd.242.0195

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：195 / 205

页数：11

共 52 条

[1] OVERVIEW OF MATERIALS AND PROCESS ASPECTS OF JOSEPHSON INTEGRATED-CIRCUIT FABRICATION [J].

AMES, I .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :188-194

[2]

AMES I, 1974, Patent No. 3852795

[3] JOSEPHSON COMPUTER-TECHNOLOGY - IBM RESEARCH-PROJECT [J].

ANACKER, W .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :107-112

[4]

ANACKER W, UNPUBLISHED

[5]

ANACKER W, 1973, Patent No. 3733526

[6]

BAKER JA, UNPUBLISHED

[7] STRUCTURE OF TUNNEL BARRIER OXIDE FOR PB-ALLOY JOSEPHSON-JUNCTIONS [J].

BAKER, JM ;

KIRCHER, CJ ;

MATTHEWS, JW .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :223-234

[8] TUNNELING IN LEAD LEAD JUNCTIONS/ JUNCTIONS [J].

BASAVAIAH, S ;

ELDRIDGE, JM ;

MATISOO, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :457-464

[9]

BASAVAIAH S, UNPUBLISHED

[10]

BASAVAIAH S, 1975, IBM TECH DISCLOSURE, V17, P3488

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