CRYOGENIC CHARGE-SENSITIVE PREAMPLIFIERS FOR HIGH DYNAMIC-RANGE AND FAST SPEED OF RESPONSE USING GAAS TECHNOLOGY

被引:3
作者
CAMIN, DV [1 ]
PESSINA, G [1 ]
PREVITALI, E [1 ]
机构
[1] UNIV MILAN,IST NAZL FIS NUCL,I-20133 MILAN,ITALY
关键词
D O I
10.1109/23.289262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Charge sensitive preamplifiers using GaAs MESFETs have been designed to satisfy requirements of high dynamic range, low power dissipation and low noise at short shaping times. They use SGM20006M MESFETS, a replacement type for the 3SK164. The main parameters of the preamplifiers with a detector capacitance of 400pF are the following ones: the equivalent noise charge (ENC) is 5500 rms electrons at 77K at 100-mu-s gaussian shaping time; the input resistance 22-OMEGA, the power dissipation 52 mW with 0.2% integral nonlinearity and 2 V output. Radiation damage test have been performed showing a fairly high ENC insensitivity to 10(14)n/cm2 neutron fluence particularly at short shaping time. Ionizing radiation increases the ENC by a factor 2 when the dose is 10 MRad(Si).
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页码:53 / 57
页数:5
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