POWER SCALING IN QUANTUM-WELL LASER-AMPLIFIERS

被引：4

作者：

CHOW, WW ^{[1
]}

CRAIG, RR ^{[1
]}

机构：

[1] SPECTRA DIODE LABS INC,SAN JOSE,CA 95134

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 10期

关键词：

D O I：

10.1109/3.97270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis is used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. Our analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration.

引用

页码：2267 / 2273

页数：7

共 20 条

[1]

Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].