RESONANCE RAMAN SCATTERING IN INSB NEAR E1 TRANSITION

被引：40

作者：

YU, PY

SHEN, YR

机构：

来源：

PHYSICAL REVIEW LETTERS | 1972年 / 29卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.29.468

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：468 / &

相关论文

共 29 条

[1] BALKANSKI M, 1971, ARTICLES LIGHT SCATT
[2] THEORY OF RESONANT RAMAN SCATTERING IN CRYSTALS - GENERALIZED BARE-EXCITON APPROACH
BENDOW, B
BIRMAN, JL
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 569 - &
[3] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[4] Cardona M., 1969, MODULATION SPECTROSC
[5] CERDEIRA F, 1972, SOLID STATE COMMUN, V9, P819
[6] BOUND EXCITON RESONANCE IN RAMAN CROSS SECTIONS IN CDS
DAMEN, TC
SHAH, J
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (22) : 1506 - &
[7] THEORY OF LATTICE RAMAN SCATTERING IN INSULATORS
GANGULY, AK
BIRMAN, JL
[J]. PHYSICAL REVIEW, 1967, 162 (03): : 806 - +
[8] COULOMB EFFECTS AT SADDLE-TYPE CRITICAL POINTS
KANE, EO
[J]. PHYSICAL REVIEW, 1969, 180 (03): : 852 - &
[9] RESONANT SURFACE RAMAN SCATTERING IN DIRECT-GAP SEMICONDUCTORS
LEITE, RCC
SCOTT, JF
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (04) : 130 - &
[10] THEORY OF FIRST-ORDER RAMAN EFFECT IN CRYSTALS
LOUDON, R
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 275 (1360) : 218 - +