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PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT

被引：21
作者：
DONNELLY, JP
CALAWA, AR
FOYT, AG
LINDLEY, WT
HARMAN, TC
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期
关键词：
D O I：
10.1016/0038-1101(72)90111-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：403 / &
相关论文
共 5 条
[1]   N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].
DONNELLY, JP ;
HARMAN, TC ;
FOYT, AG .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&
[2]   TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].
FOYT, AG ;
HARMAN, TC ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1971, 18 (08) :321-&
[3]   N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J].
FOYT, AG ;
LINDLEY, WT ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1970, 16 (09) :335-&
[4]   PHOTOVOLTAIC EFFECT IN PBKAPPASN1-KAPPATE DIODES [J].
MELNGAILIS, I ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1966, 9 (08) :304-+
[5]  
Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1
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