CATHODOLUMINESCENCE STUDIES OF ANOMALOUS ION-IMPLANTATION DEFECT INTRODUCTION IN LIGHTLY AND HEAVILY DOPED LIQUID-PHASE EPITAXIAL GAAS-SN

被引：9

作者：

NORRIS, CB

BARNES, CE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5764 / 5772

页数：9

共 23 条

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[3]

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[5]

BOTTIGER J, 1973, ION IMPLANTATION SEM, P599

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FAVENNEC PN, 1975, I PHYS C SER, V23, P481

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[8]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[9] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J].

HUNSPERGER, RG ;

MARSH, OJ .

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[10] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J].

HUNSPERGER, RG ;

MARSH, OJ ;

MEAD, CA .

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