A STUDY ON THE RELATIONSHIP BETWEEN GROWTH TECHNIQUE AND DOPANTS ON THE ELECTRICAL-PROPERTIES OF GAAS WITH SPECIAL REFERENCE TO LEC GROWTH

被引：46

作者：

MULLIN, JB

ROYLE, A

BENN, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90006-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：625 / 637

页数：13

共 45 条

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