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HOT-ELECTRON CAMEL TRANSISTOR
被引：42
作者：
SHANNON, JM
机构：
来源：
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES
|
1979年
/
3卷
/
05期
关键词：
D O I：
10.1049/ij-ssed.1979.0030
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
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页码：142 / 144
页数：3
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