PHASE-DIAGRAM OF VICINAL SI(001) SURFACES

被引：72

作者：

PEHLKE, E

TERSOFF, J

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.67.1290

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Vicinal Si(001) surfaces are believed to undergo a phase transition between single and double atomic height steps as either temperature or angle of miscut is varied. Here we calculate the full temperature-angle phase diagram, which is found to be quite different than previously believed. In particular, there is a critical point above which there is no phase transition at all. The results appear to explain the rather continuous behavior seen in a variety of experiments.

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页码：1290 / 1293

页数：4

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