PRESSURE EFFECT ON LASB AND CEAS

Pressure effects on the electronic states in LaSb and CeAs are studied in detail based on high-pressure dHvA measurement. In LaSb, it was shown that even for small carriers, the Fermi surfaces do not change uniformly because of a strong k-dependent p-d mixing effect on the conduction band and strong deviation from k2-dispersion of the hole band. Strong anisotropy found in c11 acoustic dHvA was attributed to the above mechanism. A magnetic polaron lattice, inserted in the 4fGAMMA7 ground state, is able to explain unusual properties in CeAs, as well as in CeP.