MONOLITHICALLY INTEGRATED ALGAAS DOUBLE HETEROSTRUCTURE OPTICAL COMPONENTS

被引：37

作者：

REINHART, FK ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 10期

关键词：

D O I：

10.1063/1.1655335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 624

页数：3

共 16 条

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NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3907-3912

[4] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

[5]

HAYASHI I, 1970, APPL PHYS LETT, V16, P326

[6] CHARGE STORAGE IN INJECTION LASERS AND ITS EFFECT ON HIGH-SPEED PULSE-MODULATION OF LASER DIODE [J].

LEE, TP ;

DEROSIER, RM .

PROCEEDINGS OF THE IEEE, 1974, 62 (08) :1176-1177

[7]

LEE TP, TO BE PUBLISHED

[8] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

[9] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

MILLER, BI ;

CAPIK, RJ ;

HAYASHI, I ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2817-&

[10] EFFICIENT GAAS-ALX GA1-X AS DOUBLE-HETEROSTRUCTURE LIGHT MODULATORS [J].

REINHART, FK ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1972, 20 (01) :36-&

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