SEEDED GROWTH OF SELENIUM CRYSTALS UNDER HIGH PRESSURE

被引：6

作者：

HARRISON, JD

机构：

[1] Westinghouse Research Laboratories, Pittsburgh, PA

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.1656838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two improvements in the technique of growing selenium single crystals under high pressure have been made: (1) the use of seed crystals of predetermined orientation, and (2) the annealing of the newly grown crystals during depressurization. The method of seed preparation and the characteristics of the resulting crystals are described. Odd growth patterns were observed at the seed-new growth interface. © 1968 The American Institute of Physics.

引用

页码：3672 / &