SPIN SPLITTING AND ULTRAVIOLET ABSORPTION OF GE

[1] ELECTRON ENERGY BANDS IN TELLURIUM [J]. PHYSICAL REVIEW, 1966, 145 (02): : 479 - &

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] BRUST D, 1968, ADVANCES COMPUTATION, V8, P33

[4] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[5] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &

[6] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] EFFECT OF SURFACE DAMAGE ON REFLECTANCE OF GERMANIUM IN 2650-10 000-A REGION [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) : 1403 - &

[9] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[10] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &

[1] ELECTRON ENERGY BANDS IN TELLURIUM [J]. PHYSICAL REVIEW, 1966, 145 (02): : 479 - &

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] BRUST D, 1968, ADVANCES COMPUTATION, V8, P33

[4] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[5] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &

[6] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] EFFECT OF SURFACE DAMAGE ON REFLECTANCE OF GERMANIUM IN 2650-10 000-A REGION [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) : 1403 - &

[9] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[10] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &