PROPERTIES OF CHEMICALLY SPRAYED SNO2 ANTI-REFLECTING FILMS ON SI SOLAR-CELLS

被引：27

作者：

CHAMBOULEYRON, I

SAUCEDO, E

机构：

[1] Departamento de Ingenieria Electrica, Centro de Investigacion, I.P.N., Mexico 14, DF

来源：

SOLAR ENERGY MATERIALS | 1979年 / 1卷 / 3-4期

关键词：

D O I：

10.1016/0165-1633(79)90047-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The properties of SnO2 films obtained by hydrolysis of stannic chloride on silicon surfaces are described. The layers grown by this method possess certain characteristics which make them interesting for photovoltaic applications. Antireflection effects on the Si-air interface are obtained together with a very large reduction of the surface recombination velocity. This latter effect is explained in terms of hydrogen or chlorine adsorption at the SnO2-Si interface via the completion of interface dangling bonds. Experimental evidence and theoretical considerations that support such an explanation are given. However, the question of whether or not chlorine could play a passivating role remains open. Finally some considerations are made concerning the possible uses of Sb doped SnO2 layers on Si solar cells. © 1979.

引用

页码：299 / 311

页数：13

共 37 条

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