VERTICAL TRANSPORT IN SCHOTTKY-GATED, LATERALLY CONFINED DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES

被引：14

作者：

GUERET, P

BLANC, N

GERMANN, R

ROTHUIZEN, H

机构：

[1] IBM Research Division, Zürich Research Laboratory

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90338-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the conductance properties of double-barrier quantum well resonant tunneling heterostructures, laterally confined by a Schottky gate such that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported.

引用

页码：212 / 216

页数：5

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