SWITCHING PHENOMENON AND MEMORY EFFECT IN THIN-FILM HETEROJUNCTION OF POLYCRYSTALLINE SELENIUM SILVER SELENIDE

被引:3
作者
ALEKSIEJUNAS, A [1 ]
CESNYS, A [1 ]
机构
[1] ACAD SCI LISSR, SEMICOND PHYS INST, VILNIUS, LISSR
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 19卷 / 02期
关键词
D O I
10.1002/pssa.2210190259
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K169 / K171
页数:3
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CANADIAN JOURNAL OF PHYSICS, 1971, 49 (21) :2718-&
[4]  
CESNYS A, Patent No. 280679
[5]  
KLYAUS KI, 1968, SBORNIK VYCHISLITELN, V5
[6]   POLARIZED MEMORY EFFECT IN SE THIN-FILM DIODES [J].
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YAMAMOTO, K ;
YAMAGAMI, T ;
OKUDA, M .
SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1413-+