GAINAS/GAAS QUANTUM-WIRE LASER STRUCTURES WITH STRONG GAIN COUPLING DEFINED BY REACTIVE ION ETCHING

被引：11

作者：

ORTH, A

ZULL, H

REITHMAIER, JP

FORCHEL, A

机构：

[1] Technische Physik, Universität Würzburg, D-97074 Würzburg, Am Hubland

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 06期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WIRES; REACTIVE ION ETCHING;

D O I：

10.1049/el:19950343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gain-coupled GaInAs/GaAs quantum wire lasers have been realised with wire widths down to 70nm by low-damage dry etching. Very strong gain modulation has been achieved by etching through the active layers. The optically pumped laser structures show singlemode operation at 77K.

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收藏

页码：457 / 458

页数：2

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