INFLUENCE OF OXYGEN IN THE FORMATION OF ISOELECTRONIC COMPLEXES IN IMPLANTED SI-IN

被引：5

作者：

BROWN, TG

BRADFIELD, PL

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.37.2699

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2699 / 2700

页数：2

共 13 条

[1]

[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] EVIDENCE FOR THE EXISTENCE OF A COMPLEX ISOELECTRONIC CENTER IN SI-IN [J].

BROWN, DH ;

SMITH, SR .

JOURNAL OF LUMINESCENCE, 1980, 21 (04) :329-336

[3] OPTICAL-EMISSION AT 1.32-MU-M FROM SULFUR-DOPED CRYSTALLINE SILICON [J].

BROWN, TG ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :245-247

[4] METASTABLE IMPURITIES IN SEMICONDUCTORS - SI-MG AND SI-BE [J].

FROYEN, S ;

ZUNGER, A .

PHYSICAL REVIEW B, 1986, 34 (10) :7451-7454

[5] OBSERVATION OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI-IN [J].

MITCHARD, GS ;

LYON, SA ;

ELLIOTT, KR ;

MCGILL, TC .

SOLID STATE COMMUNICATIONS, 1979, 29 (05) :425-429

[6] SOLUBILITY OF FLAWS IN HEAVILY-DOPED SEMICONDUCTORS [J].

SHOCKLEY, W ;

MOLL, JL .

PHYSICAL REVIEW, 1960, 119 (05) :1480-1482

[7] VIBRONIC SPECTRUM OF THE U2 ISOELECTRONIC CENTER IN SI-IN [J].

STAHLBUSH, RE ;

FORMAN, RA .

JOURNAL OF LUMINESCENCE, 1982, 26 (03) :227-232

[8] ENHANCEMENT OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI - IN [J].

THEWALT, MLW ;

ZIEMELIS, UO ;

PARSONS, RR .

SOLID STATE COMMUNICATIONS, 1981, 39 (01) :27-30

[9] HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL [J].

VOUK, MA ;

LIGHTOWLERS, EC .

JOURNAL OF LUMINESCENCE, 1977, 15 (04) :357-384

[10]

WAGNER J, 1983, PHYS REV B, V27, P6569

← 1 2 →