SELECTIVE ETCHING STUDIES ON CESIUM IODIDE-CRYSTALS

被引：14

作者：

SANGWAL, K ^{[1
]}

URUSOVSKAYA, AA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST CRYSTALLOG,MOSCOW V-71,USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90048-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：216 / 224

页数：9

共 17 条

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[2]

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[4] MECHANISM OF SELECTIVE DISSOLUTION OF NACL CLEAVAGES [J].

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BANSIGIR, KG .

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[5] DISLOCATION ETCH PIT FORMATION IN LITHIUM FLUORIDE [J].

GILMAN, JJ ;

JOHNSTON, WG ;

SEARS, GW .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) :747-754

[6]

GUTMANAS EY, 1968, KRISTALLOGRAFIYA, V13, P114

[7]

HARIBABU V, 1967, J PHYS SOC JPN, V23, P860

[8]

HARIBABU VV, 1968, J CRYSTAL GROWTH, V2, P8

[9]

KOSTIN NF, 1961, KRISTALLOGRAFIYA, V6, P737

[10] DISLOCATION ETCH TECHNIQUES FOR SOME ALKALI HALIDE CRYSTALS [J].

MORAN, PR .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1768-1769

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