ALGAAS GAAS LATERAL CURRENT INJECTION MULTIQUANTUM WELL (LCI-MQW) LASER USING IMPURITY-INDUCED DISORDERING

被引：17

作者：

FURUYA, A

MAKIUCHI, M

WADA, O

FUJII, T

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 12期

关键词：

Semiconducting Aluminum Compounds--Impurities - Semiconducting Gallium Arsenide--Impurities;

D O I：

10.1109/3.14375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage.

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页码：2448 / 2453

页数：6

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