GROWTH OF ZNSE1-XTEX THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

OGURI, H

PARK, KS

ISSHIKI, M

FURUKAWA, Y

机构：

[1] Department of Materials Science, Faculty of Engineering, Tohoku University, Sendai

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90727-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe1-xTex thin films have been grown on (100)GaAs and (100)InP substrates using an atmospheric pressure MOCVD. In the whole range of x, ZnSe1-xTex epitaxial films are grown on both substrates at 523-673 K using DEZn, DESe and DETe as the sources. It is found that the value of x in the grown films can be controlled by changing the ratio of supplies of DESe and DETe, though the value of x is higher than the fraction of DETe in the VI sources. The growth rate depends on the value of x.

引用

页码：116 / 118

页数：3