STRIATIONS DUE TO COMPOSITIONAL VARIATIONS IN CZOCHRALSKI-GROWN (PB1-XSNX)1-Y TEY

被引:10
作者
BURKE, JR [1 ]
JENSEN, JD [1 ]
HOUSTON, B [1 ]
机构
[1] USN,ORD LAB,SILVER SPRING,MD 20910
关键词
METALLURGY - SEMICONDUCTOR MATERIALS - Energy Gap;
D O I
10.1149/1.2403471
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this paper the authors will present some of the metallurgical properties of single crystals grown by the Czochralski technique, and briefly mention the results of Shubnikov-de Haas experiments which appear to be influenced by this method of growth.
引用
收藏
页码:431 / 435
页数:5
相关论文
共 10 条