DISLOCATIONS IN GADOLINIUM GALLIUM GARNET (GD3GA5O12) .1. DISLOCATIONS AT INCLUSIONS REPLY

被引：5

作者：

MATTHEWS, JW

KLOKHOLM, E

SADAGOPAN, V

PLASKETT, TS

MENDEL, E

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA

[2] IBM CORP, SYST PROD DIV, E FISHKILL, NY 12533 USA

来源：

SCRIPTA METALLURGICA | 1973年 / 7卷 / 07期

关键词：

D O I：

10.1016/0036-9748(73)90118-X

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：707 / 709

页数：3

共 9 条

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[5] GENERATION OF LARGE PRISMATIC DISLOCATION LOOPS AT INCLUSIONS IN CRYSTALS [J].

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[8] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS [J].

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[9] DISLOCATIONS IN GADOLINIUM GALLIUM GARNET (GD3 GA5 O12)- .1. DISLOCATIONS AT INCLUSIONS [J].

NES, E .

SCRIPTA METALLURGICA, 1973, 7 (07) :705-706

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