20 GBIT/S OPERATION OF A HIGH-EFFICIENCY INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH 1.2-V DRIVE VOLTAGE

被引：58

作者：

DEVAUX, F

DORGEUILLE, F

OUGAZZADEN, A

HUET, F

CARRE, M

CARENCO, A

HENRY, M

SOREL, Y

KERDILES, JF

JEANNEY, E

机构：

[1] CNET,FRANCE TELECOM,F-22301 LANNION,FRANCE

[2] CNET,FRANCE TELECOM,F-92131 ISSY MOULINEAX,FRANCE

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 11期

关键词：

D O I：

10.1109/68.250046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum-wells. The drive voltage for 12-dB extinction ratio is 1.2 V, whereas the frequency response is flat within 2 dB from de to 20 GHz. 20 Gb/s operation is presented. Extensive data concerning the parasitic phase modulation (chirping) are reported for the first time as a function of applied bias and operating wavelength.

引用

页码：1288 / 1290

页数：3

共 9 条

[1] INGAASP/INGAASP MULTIPLE-QUANTUM-WELL MODULATOR WITH IMPROVED SATURATION INTENSITY AND BANDWIDTH OVER 20-GHZ [J].