HIGH-TC JOSEPHSON JUNCTIONS BY ELECTRON BEAM IRRADIATION

被引:36
作者
Pauza, A. J. [1 ]
Campbell, A. M. [1 ]
Moore, D. F. [1 ]
Somekh, R. E. [1 ,2 ]
Boers, A. N. [1 ,3 ]
机构
[1] Irc Superconduct, Madingley Rd, Cambridge CB2 0HE, England
[2] Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England
[3] Univ Cambridge, Dept Engn, Trumpington St, Cambridge CB2 1PZ, England
关键词
Electron beam irradiation - Resistively shunted junctions - SQUIDs;
D O I
10.1109/77.233417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Josephson junctions are produced by electron beam irradiation of pattemed YBa2Cu3O7-delta thin film tracks on MgO substrates. Single weak links show Fraunhofer type critical current behaviour as a function of field (I-c( H)), indicating reasonable current uniformity across the junction. Simple low inductance SQUIDs have also been made with >70% critical current modulation at 25K. The relatively high critical current density of these weak links means that it is possible to observe a cross-over from small to large junction behaviour at a temperature only a few degrees below the T-c of the junction. In the small junction regime the current-voltage (IV) curves can be fitted by the resistively shunted junction (RSJ) model, whilst in the large junction regime the IV curves change to be non-RSJ like. The IcRn product is typically around 0.05 - 0.2 mV at temperatures a few degrees below the Tc of the junction and for a junction with a high T-c can reach 1mV at 4.2K. The width of the irradiated line is found to be in the range 20-100nm.
引用
收藏
页码:2405 / 2408
页数:4
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