ON DEPENDENCE OF PHOTOCURRENTS ON EXCITATION STRENGTH

Frequently the relation between the electron concentration n and the excitation density G in a photoconductor can be exactly or approximately described by a power law n ∼ Gv. General and clear conditions for the exponent v can be derived provided the recombination of free carriers runs mainly through one channel and in the neutrality condition one group of positive and one of negative charge carriers dominate. The method is described in detail for a general model and the results are discussed. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim