CALCULATIONS OF THE ELECTRIC-FIELD DEPENDENT FAR-INFRARED ABSORPTION-SPECTRA IN INAS/ALGASB QUANTUM WELLS

被引：5

作者：

HONG, S

LOEHR, JP

OH, JE

BHATTACHARYA, PK

SINGH, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 09期

关键词：

D O I：

10.1063/1.101616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：888 / 890

页数：3

共 15 条

[1] INFRARED DIODES FABRICATED WITH HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].

ARIAS, JM ;

DEWAMES, RE ;

SHIN, SH ;

PASKO, JG ;

CHEN, JS ;

GERTNER, ER .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1025-1027

[2] NEW MODE OF IR DETECTION USING QUANTUM WELLS [J].

COON, DD ;

KARUNASIRI, RPG .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :649-651

[3]

ESAKI L, 1985, SYNTHETIC MODULATED, P3

[4] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

BOCH, R ;

TISSOT, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1593-1597

[5] OBSERVATION OF STARK SHIFTS IN QUANTUM-WELL INTERSUBBAND TRANSITIONS [J].

HARWIT, A ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :685-687

[6]

HONG SC, 1987, IEEE J QUANTUM ELECT, V23, P2181, DOI 10.1109/JQE.1987.1073293

[7] PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES [J].

KURTZ, SR ;

OSBOURN, GC ;

BIEFELD, RM ;

LEE, SR .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :216-218

[8] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

LAWAETZ, P .

PHYSICAL REVIEW B, 1971, 4 (10) :3460-&

[9] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

CHOI, KK ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[10] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

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