MEASUREMENT ARRANGEMENT FOR DIRECT CAPACITANCE SURFACE-POTENTIAL RECORDING ON MOS CAPACITOR

被引：2

作者：

LIGTENBERG, HCG

SNIJDER, J

机构：

[1] Department of Applied Physics, Groningen State University, 9747 AG Groningen

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 17期

关键词：

Capacitance; Metal-insulator-semiconductor structure;

D O I：

10.1049/el:19790377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the slow-ramp C/V method as a starting point, a measuring method is developed to measure directly the total m.o.s. capacitance as a function of the surface potential. The advantages of this method are a greater accuracy and an easy way to compensate for leakage currents. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：523 / 524

页数：2