INFLUENCE OF THE SURFACE PRETREATMENT ON THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS AND THE SPECTRAL RESPONSE OF THE N-GAAS-ELECTROLYTE INTERFACE

被引：26

作者：

VANMEIRHAEGHE, RL ^{[1
]}

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1979年 / 83卷 / 03期

关键词：

ELECTROLYTES - SEMICONDUCTING GALLIUM COMPOUNDS;

D O I：

10.1002/bbpc.19790830310

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A comparative study was made on the photocurrent of etched and mechanically polished n-GaAs single crystal electrodes. The photocurrent was investigated as a function of voltage, light intensity and wavelength. The results indicate that polishing creates defects which act as recombination centers. Spectral response measurements yield information on the spatial distribution of the defects involved and on the diffusion length of the holes.

引用

页码：236 / 241

页数：6

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