THEORETICAL LIMIT OF MOBILITY OF 2-DIMENSIONAL ELECTRONS IN GAAS

被引：44

作者：

KARPUS, V

机构：

[1] Semiconductor Phys. Inst., Acad. of Sci.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 07期

关键词：

D O I：

10.1088/0268-1242/5/7/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The acoustic phonon limited mobility of two-dimensional electrons in an (001)AlGaAs/GaAs heterojunction is calculated. It exceeds the highest experimentally achieved value of mobility by approximately six times at the liquid helium temperature.

引用

页码：691 / 694

页数：4

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