ANALOG CCD REFORMATTING MEMORY EMPLOYING TWO-DIMENSIONAL CHARGE-TRANSFER

An analog CCD reformatting memory has been designed and fabricated using an n-channel double level polysilicon gate process. This unique CCD structure employs two- dimensional charge transfer cells in a 32 × 32 element array which is accessed by means of integrated CCD demultiplexer and multiplexer structures resulting in greater dynamic range than observed in previous line-addressed designs. The design and operation of this structure are discussed, and examples of applications in analog signal processor architectures are described. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.