POINT-DEFECT INTERACTIONS WHEN ANNEALING DIAMONDS IMPLANTED AT LOW-TEMPERATURES

In this paper, the point-defect interactions which occur during annealing, when doping diamond by means of the cold-implantation-rapid-annealing technique [Phys. Rev. B 38, 5576 (1988)], are modeled using reaction-rate theory. The equations predict that the magnitudes of the activation energies, controlling dopant-interstitial-vacancy combination and dopant-interstitial diffusion, relative to the same energies applicable to the self-interstitials, determine the end result which will be obtained for a chosen implantation-annealing sequence. It is also possible to explain why an increase in the annealing temperature can lead to a decrease in dopant activation, as had been observed experimentally (and reported elsewhere) for boron. Reasonable values for the self-interstitial activation energies are found when applying this model to previously published results.