STUDY OF STABILITY OF MIS POLYCRYSTALLINE SILICON SOLAR-CELLS BY AUGER-ELECTRON SPECTROSCOPY

被引:6
作者
LEE, BW [1 ]
KUO, JM [1 ]
LALEVIC, B [1 ]
ANDERSON, WA [1 ]
机构
[1] SUNY BUFFALO,DEPT ELECT ENGN,AMHERST,NY 14226
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571088
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:696 / 699
页数:4
相关论文
共 12 条
[1]   IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J].
ANDERSON, WA ;
MILANO, RA .
PROCEEDINGS OF THE IEEE, 1975, 63 (01) :206-208
[2]   RELIABILITY STUDIES ON MIS SOLAR-CELLS [J].
ANDERSON, WA ;
KIM, JK .
APPLIED PHYSICS, 1978, 17 (04) :401-404
[3]   HIGH-EFFICIENCY CR-MIS SOLAR-CELLS ON SINGLE AND POLYCRYSTALLINE SILICON [J].
ANDERSON, WA ;
DELAHOY, AE ;
KIM, JK ;
HYLAND, SH ;
DEY, SK .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :588-590
[4]  
ANDERSON WA, 1977, IEEE T ELECTRON DEVI, V24, P483
[5]  
[Anonymous], [No title captured]
[6]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[7]   MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS [J].
CARD, HC ;
YANG, ES .
APPLIED PHYSICS LETTERS, 1976, 29 (01) :51-53
[8]   AUGER, ELLIPSOMETRY, AND ENVIRONMENTAL-STUDIES OF THIN-FILMS APPLIED TO SCHOTTKY (MIS) SOLAR-CELLS [J].
KIM, JK ;
ANDERSON, WA ;
DELAHOY, AE .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :403-414
[9]   EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J].
LILLINGTON, DR ;
TOWNSEND, WG .
APPLIED PHYSICS LETTERS, 1976, 28 (02) :97-98
[10]   STUDY OF THE INITIAL OXIDATION OF CR(100) AT ROOM-TEMPERATURE [J].
PERUCHETTI, JC ;
GEWINNER, G ;
JAEGLE, A .
SURFACE SCIENCE, 1979, 88 (2-3) :479-497