ELECTRON INTERSUBBAND NORMAL INCIDENCE ABSORPTION IN INGAAS/GAAS QUANTUM-WELLS

被引：29

作者：

LI, HS

KARUNASIRI, RPG

CHEN, YW

WANG, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normal incidence electron intersubband transition in InGaAs/GaAs square quantum wells has been observed. With the incident light polarized (x axis) perpendicular to the growth direction (z axis) of the quantum well, a distinct absorption peak was observed. The absorption peak occurs at a different frequency from the peak induced by a mixed yz-polarized light. The latter has a smaller peak strength and is shifted at a lower frequency in the absorption spectrum, and the shift can be interpreted in part as a result of the depolarization effect. The mechanism responsible for the observation of the normal incidence absorption is discussed.

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页码：922 / 925

页数：4

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