TEMPERATURE DEPENDENCES OF THE ELECTRICAL-CONDUCTIVITY AND HALL-COEFFICIENT OF INDIUM TELLURIDE SINGLE-CRYSTALS

被引:24
作者
HUSSEIN, SA
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D O I
10.1002/crat.2170240616
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:635 / 638
页数:4
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共 10 条
[1]  
Abrikosov N.G., 1975, SEMICONDUCTOR CHALCO
[2]   TEMPERATURE AND PRESSURE-DEPENDENCE OF THE CRYSTAL-STRUCTURE OF INTE - A NEW HIGH-PRESSURE PHASE OF INTE [J].
CHATTOPADHYAY, T ;
SANTANDREA, RP ;
VONSCHNERING, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (03) :351-356
[3]   PHASE DIAGRAM FOR BINARY SYSTEM INDIUM-TELLURIUM + ELECTRICAL PROPERTIES OF IN3 TE5 [J].
GROCHOWSKI, EG ;
SCHMITT, GA ;
MASON, DR ;
SMITH, PH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (06) :551-&
[4]   CRYSTAL-STRUCTURE OF TETRAINDIUM TRITELLURIDE [J].
HOGG, JHC ;
SUTHERLA.HH .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1973, 29 (NOV15) :2483-2487
[5]   ON THE PREPARATION AND ELECTRICAL-PROPERTIES OF THALLIUM SELENIDE MONOCRYSTALS [J].
HUSSEIN, SA ;
NAGAT, AT .
CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (03) :283-289
[6]   INFRARED OPTICAL-PROPERTIES OF INTE [J].
RIEDE, V ;
NEUMANN, H ;
SOBOTTA, H ;
LEVY, F .
SOLID STATE COMMUNICATIONS, 1981, 38 (01) :71-73
[7]  
SCHUBERT K, 1955, Z METALLKD, V64, P216
[8]   INDIUM POLYTELLURIDE IN2TE5 [J].
SUTHERLAND, HH ;
HOGG, JHC ;
WALTON, PD .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1976, 32 (AUG15) :2539-2541
[9]  
TOLYTUS VB, 1967, PHYS LETT, V7, P819
[10]  
TRIPP E.H, 1942, MAT HDB, V150