GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS

被引：94

作者：

BASKIN, LM

LVOV, OI

FURSEY, GN

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 47卷 / 01期

关键词：

D O I：

10.1002/pssb.2220470105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：49 / &

共 20 条

[1] FIELD EMISSION FROM PHOTOCONDUCTORS
APKER, L
TAFT, E
[J]. PHYSICAL REVIEW, 1952, 88 (05): : 1037 - 1038
[2] PHOTOSENSITIVE FIELD EMISSION FROM P-TYPE GERMNIUM
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3221 - &
[3] PHOTO-FIELD-EMISSION FROM HIGH-RESISTANCE SILICON AND GERMANIUM
BORZYAK, PG
YATSENKO, AF
MIROSHNICHENKO, LS
[J]. PHYSICA STATUS SOLIDI, 1966, 14 (02): : 403 - +
[4] Busch G., 1963, PHYS KONDENS MATER, V1, P367
[5] UNIFIED THEORY OF THERMIONIC AND FIELD EMISSION FROM SEMICONDUCTORS
CHRISTOV, SG
[J]. PHYSICA STATUS SOLIDI, 1967, 21 (01): : 159 - &
[6] Elinson MI, 1965, RADIOTEKH ELEKTRON, V10, P1288
[7] Fursei G. N., 1969, Fizika Tverdogo Tela, V11, P3672
[8] FURSEI GN, 1968, VESTN LENINGR U, V16, P167
[9] FIELD EMISSION FROM P-TYPE SI
FURSEY, GN
EGOROV, NV
[J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : 23 - +
[10] FIELD EMMISSION FROM P-TYPE GERMANIUM
FURSEY, GN
SOKOLSKAYA, IL
IVANOV, VG
[J]. PHYSICA STATUS SOLIDI, 1967, 22 (01): : 39 - +