RECTIFYING ACTION AND ELECTROMOTIVE FORCES OF FILMS OF TA205 AND SI02 AT HIGH TEMPERATURES

被引：13

作者：

ISHIKAWA, Y

SASAKI, Y

SEKI, Y

INOWAKI, S

机构：

来源：

关键词：

D O I：

10.1063/1.1729552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：867 / &

共 21 条

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ATALLA, MM
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SCHEIBNER, EJ
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[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION
ATALLA, MM
TANNENBAUM, E
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946
[3] BRAY AR, 1957, P PHYS SOC LONDON, V71, P405
[4] THEORY OF THE OXIDATION OF METALS
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MOTT, NF
[J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184
[5] TRANSIENT EFFECTS IN THE IONIC CONDUCTANCE OF ANODIC-OXIDE FILMS AT HIGH FIELDS
DEWALD, JF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (01) : 55 - 66
[6] DEWLAAL JF, 1955, J ELECTROCHEM SOC, V102, P1
[7] LANDOLTBORNSTEI, 1959, ZAHLENWERTE FUNKTION, V3, P523
[8] GIANT TRAPS
LAX, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 66 - 73
[9] MOTT NF, 1940, ELECT PROCESSES IONI, P42
[10] ION DRIFT IN AN N-P JUNCTION
PELL, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302