PRESSURE-INDUCED COMPENSATION IN N-TYPE AGLNSE2

被引：4

作者：

JAYARAMAN, A

TELL, B

MAINES, RG

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 01期

关键词：

D O I：

10.1063/1.89832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pressure dependence of resisitivity of n-type AgInSe2 has been investigated up to 40 kbar hydrostatic pressure. The resisitivity shows a slight increase with pressure up to 26 kbar but exhibits a phenomenal time-dependent rise in the region between 28 and 32 kbar. The sample resisitivity rises by a factor of 2×106 before saturating. We believe that this effect is due to the formation of compensating defect centers in the crystal, prior to the sluggish transformation from the chalcopyrite to the NaCl-type structure.

引用

页码：21 / 22

页数：2

共 10 条

[1]

Drickamer HG, 1965, REV SCI INSTRUM, V17, P1

[2] EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS [J].