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EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P-N JUNCTION STRESS
被引:33
作者
:
COLLINS, DR
论文数:
0
引用数:
0
h-index:
0
COLLINS, DR
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1968年
/ 13卷
/ 08期
关键词
:
D O I
:
10.1063/1.1652602
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:264 / &
相关论文
共 6 条
[1]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[2]
GHYNOWETH AG, 1957, PHYS REV, V106, P418
[3]
MATHEWS JR, 1965, J ELECTROCHEM SOC, V112, P900
[4]
SCHENCK JF, 1967, PHYSICS FAILURE ELEC, V5
[5]
SCHILLIDAY TS, 1967, PHYSICS FAILURE E ED, V5
[6]
TOKUYAMA T, 1967, PHYSICS FAILURE ELEC, V5
←
1
→
共 6 条
[1]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[2]
GHYNOWETH AG, 1957, PHYS REV, V106, P418
[3]
MATHEWS JR, 1965, J ELECTROCHEM SOC, V112, P900
[4]
SCHENCK JF, 1967, PHYSICS FAILURE ELEC, V5
[5]
SCHILLIDAY TS, 1967, PHYSICS FAILURE E ED, V5
[6]
TOKUYAMA T, 1967, PHYSICS FAILURE ELEC, V5
←
1
→