GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] METHOD OF ESTIMATING DELAY IN SWITCHING CIRCUITS + FIGURE OF MERIT OF SWITCHING TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 497 - &

[3] BLUM SE, PRIVATE COMMUNICATIO

[4] DISMUKES JP, 1969, NAS122091 NASA REP

[5] DUMKE WP, UNPUBLISHED

[6] ZNSE-GE HETEROJUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 766 - +

[7] REALIZATION OF A GAAS-GE WIDE BAND GAP EMITTERTRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 102 - &

[8] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[9] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[10] PREPARATION AND PROPERTIES OF BORON ARSENIDES AND BORON ARSENIDE-GALLIUM ARSENIDE MIXED CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 813 - &

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] METHOD OF ESTIMATING DELAY IN SWITCHING CIRCUITS + FIGURE OF MERIT OF SWITCHING TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 497 - &

[3] BLUM SE, PRIVATE COMMUNICATIO

[4] DISMUKES JP, 1969, NAS122091 NASA REP

[5] DUMKE WP, UNPUBLISHED

[6] ZNSE-GE HETEROJUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 766 - +

[7] REALIZATION OF A GAAS-GE WIDE BAND GAP EMITTERTRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 102 - &

[8] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[9] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[10] PREPARATION AND PROPERTIES OF BORON ARSENIDES AND BORON ARSENIDE-GALLIUM ARSENIDE MIXED CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 813 - &