Kinetic Inductance Memory Cell

被引：11

作者：

Chen, George J. ^{[1
]}

Rosenthal, Peter A. ^{[1
]}

Beasley, Malcolm R. ^{[1
]}

机构：

[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1992年 / 2卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/77.139225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Josephson memory cell based on kinetic inductance is proposed and analyzed. The size of the cells can be as small as 1/100 of conventional superconducting memory cells. However, the kinetic inductance memory cell cannot utilize magnetically coupled read and write circuitry. We propose a current injected read/write architecture.

引用

收藏

页码：95 / 100

页数：6

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