YBCO MICROBOLOMETER OPERATING BELOW Tc : A MODELIZATION BASED ON CRITICAL CURRENT-TEMPERATURE DEPENDENCE

被引：11

作者：

Robbes, D. ^{[1
]}

Langlois, P. ^{[1
]}

Dolabdjian, C. ^{[1
]}

Bloyet, D. ^{[1
]}

Hamet, J. F. ^{[1
]}

Murray, H. ^{[1
]}

机构：

[1] Inst Sci Matiere & Rayonnement, Blvd Marechal Juin, F-14050 Caen, France

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using careful measurements of the I-V curve of a YBCO thin film microbridge under light irradiation at 780 nm and temperature T close to 77 K, we show that the critical current versus temperature dependence is a good thermometer for estimating bolometric effects in the film. We introduce a new dynamic voltage bias which directly gives the device current responsitivity and greatly reduces risks of thermal runaway. Detectivity is very low but we predict that noise equivalent temperature of less than 10(-7) K/root Hz would be achievable on a large temperature range (10-80 K), which is an improvement to thermometry at the resistive transition.

引用

页码：2120 / 2123

页数：4