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CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE

被引：102
作者：
PREIER, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 12期
关键词：
D O I：
10.1063/1.1728213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：361 / &
相关论文
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[4]   FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T) [J].
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[5]   MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION [J].
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[6]   MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS (SIO2-SI E) [J].
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[7]  
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