PREPARATION AND CHARACTERIZATION OF A NEW COMPOSITE-LAYERED SULFIDE, (PBS)1.12VS2, PBVS3

被引：44

作者：

GOTOH, Y ^{[1
]}

GOTO, M ^{[1
]}

KAWAGUCHI, K ^{[1
]}

OOSAWA, Y ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

MATERIALS RESEARCH BULLETIN | 1990年 / 25卷 / 03期

关键词：

Inductively Coupled Plasma-Atomic Emission Spectroscopy - Sulfides - X-Ray Weissenberg Camera;

D O I：

10.1016/0025-5408(90)90101-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(PbS)1.12VS2, "PbVS3", a new composite-layered sulfide, has been prepared and characterized using X-ray powder diffraction, electron diffraction, preliminary single crystal structure determination, and resistivity measurement. The structure is composed of two kinds of mutually stacked layers: pseudo-tetragonal two-atom-thick PbS layers with distorted NaCl type and pseudohexagonal three-atom-thick octahedrally-coordinated 1T-VS2 sandwiches. Both the lattices of PbS and VS2 have monoclinic subsystem whose periodicities match along the a and c axes but not along the b axis. The composition of "PbVS3" has been determined to be (PbS)1.12VS2 on the basis of preliminary single crystal structure determination. The temperature dependence of inplane(ab-plane) resistivity of "PbVS3" shows a semiconducting behavior. © 1990.

引用

页码：307 / 314

页数：8

共 16 条

[1] PREPARATION, STRUCTURE, AND PROPERTIES OF MULTINARY CHALCOGENIDE .3. PREPARATION AND CHARACTERIZATION OF BIMX3 (M = TI, V, NB, TA, X = S, SE), NEW COMPOSITE-LAYERED CHALCOGENIDES [J].