PRESSURE COEFFICIENT OF THE DIRECT BAND-GAP OF ALXGA1-XAS FROM OPTICAL-ABSORPTION MEASUREMENTS

被引：37

作者：

LIFSHITZ, N

JAYARAMAN, A

LOGAN, RA

MAINES, RG

机构：

[1] Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.20.2398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The shift with hydrostatic pressure of the absorption edge in AlxGa1-xAs compound semiconductors has been measured. The pressure coefficient of the direct-conduction-band minima dEgΓdP was obtained as a function of composition in the range x=0 to 0.5. The pressure coefficient, when plotted againt the compositional parameter x, is found to increase up to x=0.25 and then to decrease nonlinearly. © 1979 The American Physical Society.

引用

页码：2398 / 2400

页数：3

共 13 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].