T2-DEPENDENCE OF INVERSE HALL-MOBILITY OBSERVED IN OVERDOPED TL-CUPRATES

被引:78
作者
KUBO, Y
MANAKO, T
机构
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, 305
来源
PHYSICA C | 1992年 / 197卷 / 3-4期
关键词
D O I
10.1016/0921-4534(92)90020-D
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependences of the resistivity rho and the Hall coefficient R(H) for overdoped Tl2Ba2CuO6+delta (Tl-2201) and Tl-Sr2CaCu2O7-delta (Tl-1212) are analyzed in terms of the inverse Hall mobility mu(H)-1 = rho/R(H). The temperature dependence of mu(H)-1 shows a clear T2-dependence for the entire carrier concentration range from high-T(c) superconductor to overdoped normal metal. This is in sharp contrast to the complicated temperature dependences of both rho and R(H). These facts strongly suggest that the carrier concentration is variable with temperature as indicated by R(H), whereas the scattering rate is always associated with a single scattering mechanism being approximately T2. In that case, many "anomalous" normal state properties will disappear, and a rather simple single-band Fermi liquid picture emerges.
引用
收藏
页码:378 / 384
页数:7
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