K AND L X-RAY THRESHOLDS IN 3-4 LAYER SEMICONDUCTORS

被引：8

作者：

ANTONANGELI, F

APICELLA, ML

BALZAROTTI, A

INCOCCIA, L

PIACENTINI, M

机构：

[1] CNR,GNSM,ROME,ITALY

[2] UNIV AQUILA,CNR,GNSM,IST FIS,AQUILA,ITALY

来源：

PHYSICA B & C | 1981年 / 105卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(81)90208-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：25 / 29

页数：5

共 12 条

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