PHOTO-VOLTAGE RESPONSE TO TEMPERATURE-CHANGE AT OXIDE SEMICONDUCTOR ELECTRODES

被引:11
作者
REICHMAN, B
BYVIK, CE
机构
[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665
[2] CHRISTOPHER NEWPORT COLL,NEWPORT NEWS,VA 23606
关键词
D O I
10.1149/1.2127300
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2601 / 2603
页数:3
相关论文
共 6 条
[1]   ADSORPTION AT RUTILE-SOLUTION INTERFACE .I. THERMODYNAMIC AND EXPERIMENTAL STUDY [J].
BERUBE, YG ;
DEBRUYN, PL .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1968, 27 (02) :305-&
[2]   CORRELATION OF PHOTOSENSITIVE ELECTRODE PROPERTIES WITH ELECTRONEGATIVITY [J].
BUTLER, MA ;
GINLEY, DS .
CHEMICAL PHYSICS LETTERS, 1977, 47 (02) :319-321
[3]   PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232
[4]   TEMPERATURE-DEPENDENCE OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES [J].
BUTLER, MA ;
GINLEY, DS .
NATURE, 1978, 273 (5663) :524-525
[5]  
BYVIK CE, 1980, MAY EL SOC M ST LOU
[6]   THE NATURE OF SURFACE-STATES ON CHEMICALLY MODIFIED TIO2 ELECTRODES [J].
TOMKIEWICZ, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1518-1525