NON-PARABOLICITY AND EXCITON EFFECTS IN 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS

被引:89
作者
WEILER, MH
机构
关键词
D O I
10.1016/0038-1098(81)90042-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:937 / 940
页数:4
相关论文
共 14 条
[1]  
ARSENEV VV, 1969, SOV PHYS JETP-USSR, V29, P413
[2]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[3]   LASER CALORIMETRIC MEASUREMENT OF 2-PHOTON ABSORPTION [J].
BASS, M ;
VANSTRYLAND, EW ;
STEWART, AF .
APPLIED PHYSICS LETTERS, 1979, 34 (02) :142-144
[4]   2-PHOTON ABSORPTION IN SEMICONDUCTORS WITH PICOSECOND LASER-PULSES [J].
BECHTEL, JH ;
SMITH, WL .
PHYSICAL REVIEW B, 1976, 13 (08) :3515-3522
[5]   2-PHOTON ABSORPTION OF NEODYMIUM LASER-RADIATION IN GALLIUM-ARSENIDE [J].
BOSACCHI, B ;
BESSEY, JS ;
JAIN, FC .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) :4609-4611
[6]  
BYCHKOV YA, 1970, SOV PHYS JETP-USSR, V31, P928
[7]   FREQUENCY-DEPENDENCE OF 2-PHOTON ABSORPTION IN INSB AND HG1-XCDXTE [J].
JOHNSTON, AM ;
PIDGEON, CR ;
DEMPSEY, J .
PHYSICAL REVIEW B, 1980, 22 (02) :825-831
[8]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[9]  
KELDYSH LV, 1965, SOV PHYS JETP-USSR, V20, P1307
[10]   2-PHOTON ABSORPTION WITH EXCITON EFFECT FOR DEGENERATE VALENCE BANDS [J].
LEE, CC ;
FAN, HY .
PHYSICAL REVIEW B, 1974, 9 (08) :3502-3516